PART |
Description |
Maker |
X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length / Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62 Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
10RIF120W 16RIF120W 20RIF120W 16RIF100W 10RIF100W |
V(rrm): 1200V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1200V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1000V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1000V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers V(rrm): 1000V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers
|
International Rectifier
|
NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A. Silicon Controlled Rectifier for Phase Control Applications Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
|
NTE[NTE Electronics]
|
STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-D |
Stick Coupler 3 dB 90° Card Couplers 3 dB 90∑ Card Couplers 3 dB 90 Card Couplers SCR-600VRM 10A Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:100V; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole 3 dB 90Card Couplers 3分贝90Σ卡耦合 SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:100V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合 3 dB 90??Card Couplers 3 dB 90?Card Couplers
|
Hirose Electric USA, INC. HIROSE ELECTRIC Co., Ltd. HIROSE[Hirose Electric]
|
NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
550PEF60 550PEF10 550PEF100 550PEF40 550PEF20 550P |
V(rrm/drm): 600V; 865A RMS fast turn-off hockey puk thyristor V(rrm/drm): 100V; 865A RMS fast turn-off hockey puk thyristor V(rrm/drm): 1000V; 865A RMS fast turn-off hockey puk thyristor V(rrm/drm): 400V; 865A RMS fast turn-off hockey puk thyristor V(rrm/drm): 200V; 865A RMS fast turn-off hockey puk thyristor V(rrm/drm): 1200V; 865A RMS fast turn-off hockey puk thyristor V(rrm/drm): 800V; 865A RMS fast turn-off hockey puk thyristor
|
International Rectifier
|
CM50DU-24H |
IGBT Modules:1200V MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CM50TU-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE IGBT Modules:1200V
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
BCR10LM-14LJB00 BCR10LM-14LJA8B00 |
700V - 10A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB 21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|